Получение туннельных сенсорных МДМ-наноструктур на основе оксидов РЗЭ

Abstract

The vacuum deposition process and electrophysical parameters of super-thin fdms of rare earth elements (REE) oxides at reactive magnetron dispersion of metallic targets in the mixture of argon and oxygen were investigated. It is established that in the optimum technological regime (voltage discharge 400- 440 V, underlayer temperature 573-598 К) the o.xides of yttrium and holmium fdm's growth rate is correspondingly 3,5 and 2,8 nm/min, their specific resistance is more than lO'^ Ohm/cm, the significance of insulator permeability is within 10,4-16,8 limits. The test module topology and metal-insulator-metal (MIM) contacts of (0,2-10) ■ 10'^ тт^ square formation process were worked out to investigate the electric characteristic of tunneling MIM nanostructures on the REE oxides. The worked out test module resulted in obtaining of MIM nanostructure of Al-lREEjjOf-Al type for sensor Microsystem on the basis of super-thin films of yttrium and holmium oxides. Non-linear character of the MIM nanostuctures' dependences from the quantity of the voltage applied, stipulated by the tunneling mechanism of the insulator layers' conductivity, was investigated. It is established that at the yttrium oxide's film's thickness 5; 16 mm and MlM-contact's square (I; 2) ■ 10'^ mm^ voltage raise in the limits from 0,04 to 1,2-1,5 V results in the raise of a volt-ampere characteristic's slope from (1,5-2,5) ■ 10'^ to(I9—22) ■ 10-8 AJV. At the increase of electric voltage, resistance of the MIM nanostructures formed decreases in 1,9-4,0 times after some increasing.