Energy transfer in Tm,Ho:KYW crystal and diode-pumped microchip laser operation

dc.contributor.author	Kurilchik, S. V.	en
dc.contributor.author	Gusakova, N. V.	en
dc.contributor.author	Demesh, M. P.	en
dc.contributor.author	Yasukevich, A. S.	en
dc.contributor.author	Kisel, V. E.	en
dc.contributor.author	Pavlyuk, A. A.	en
dc.contributor.author	Kuleshov, N. V.	en
dc.date.accessioned	2016-05-12T10:06:31Z
dc.date.available	2016-05-12T10:06:31Z
dc.date.issued	2016
dc.identifier.citation	Energy transfer in Tm,Ho:KYW crystal and diode-pumped microchip laser operation / S. V. Kurilchik [et al.] // Optics Express. – 2016. – Vol. 24, № 6. – P. 6451-6458.	ru
dc.identifier.uri	https://rep.bntu.by/handle/data/23746
dc.description.abstract	An investigation of Tm-Ho energy transfer in Tm(5at.%), Ho(0.4at.%):KYW single crystal by two independent techiques was performed. Based on fluorescence dynamics measurements, energy transfer parameters P71 and P28 for direct (Tm→Ho) and back (Ho→Tm) transfers, respectively, as well as equilibrium constant Θ were evaluated. The obtained results were supported by calculation of microscopic interaction parameters according to the Förster-Dexter theory for a dipoledipole interaction. Diode-pumped continuous-wave operation of Tm,Ho:KYW microchip laser was demonstrated, for the first time to our knowledge. Maximum output power of 77 mW at 2070 nm was achieved at the fundamental TEM00 mode.	en
dc.language.iso	en	en
dc.publisher	Optical Society of America	en
dc.title	Energy transfer in Tm,Ho:KYW crystal and diode-pumped microchip laser operation	en
dc.type	Article	ru