Исследование зависимости разрешающей способности от величины зазора между шаблоном и кремниевой пластиной в фотолитографии

Abstract

In contact photolithography, the key parameter is the gap size between the photomask and the photoresist layer. Micrometer deviations lead to changes in the radiation intensity distribution and deterioration in the accuracy of topology transfer. As process standards decrease to the nanometer range, the influence of the gap becomes a critical quality factor.