Effects of dead-time in dual active bridge
Bibliographic entry
Effects of dead-time in dual active bridge = / T. Machongwe, P. B. Musiiwa, C. T. Mutamba, [и др.] // Приборостроение-2025 : материалы 18-й Международной научно-технической конференции, 13–15 ноября 2025 года Минск, Республика Беларусь / редкол.: А. И. Свистун (пред.), О. К. Гусев, Р. И. Воробей [и др.]. – Минск : БНТУ, 2025. – С. 408-409.
Abstract
The article explores the effect of dead-time in the operation of a Dual Active Bridge (DAB). DABs consist of high-speed switching devices (usually MOSFETS) as the main architecture component. The switches turn off and on at frequencies greater than 50 MHz. During this switching period, switches change from their low state to high state. If the fall time is greater than the time between switching changes, a short circuit is created leading to the damage of the switching devices. Therefore, it is very important to critically analyze the effect of dead-time during the design of the dual active bridge topology.