Технологические приемы создания интерпозеров на основе однослойных и двухслойных Al2O3-пластин с имплантированной системой алюминиевых переходных элементов

Abstract

The technological methods and regimes of interposers formation based on single-layer and double-layer membrane alumina plates with a system of aluminum passive elements, conductive interconnections and through transition elements built inside the dielectric body, obtained by local one-sided and two-sided through thickness anodizing using additional bipolar anodizing, were studied and optimized. Single-layer and double-layer interposers with dimensions of 12×12 mm and 10×10 mm, respectively, were fabricated. It was shown that the thickness of Al2O3 interposers can be changed from ~30 to ~100 μm in terms of design and technology. It was demonstrated that the thickness of implanted Al conductors can be from ~5 to ~100 μm, and different depths of their location inside Al2O3 membrane plates are possible.