Browsing Т. 12, № 3 by Author "Poklonski, N. A."
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Low-Frequency Admittance of Capacitor with Working Substance “Insulator – Partially Disordered Semiconductor – Insulator”
Poklonski, N. A.; Anikeev, I. I.; Vyrko, S. A. (БНТУ, 2021)The study of the electrophysical characteristics of crystalline semiconductors with structural defects is of practical interest in the development of radiation-resistant varactors. The capacitance-voltage characteristics of a disordered semiconductor can be used to determine the concentration of point defects in its crystal matrix. The purpose of this work is to calculate the ...2021-10-15