Diode-pumped passively mode-locked Er,Yb:YAl3(BO3)4laser at 1.5-1.6 μm

dc.contributor.author	Lagatsky, A. A.	en
dc.contributor.author	Kisel, V. E.	en
dc.contributor.author	Troshin, A. E.	en
dc.contributor.author	Tolstik, N. A.	en
dc.contributor.author	Kuleshov, N. V.	en
dc.contributor.author	Leonyuk, N. I.	en
dc.contributor.author	Zhukov, A. E.	en
dc.contributor.author	Rafailov, E. U.	en
dc.contributor.author	Sibbett, W.	en
dc.date.accessioned	2012-01-23T12:01:13Z
dc.date.available	2012-01-23T12:01:13Z
dc.date.issued	2008
dc.identifier.citation	Diode-pumped passively mode-locked Er,Yb:YAl3(BO3)4 laser at 1.5-1.6 μm // A. A. Lagatsky [et. al.] // Optics letters.– 2008. – Vol. 33, № 1. – P. 83-85.	en
dc.identifier.uri	https://rep.bntu.by/handle/data/1017
dc.description.abstract	We report the first demonstration to our knowledge of passive mode locking in a diode-pumped Er3+ and Yb3+ codoped YAl3(BO3)4 laser operating in the 1.5-1.6 μm spectral region. Low-loss GaInNAs quantum-well semiconductor saturable absorber mirrors are used for the initiation and stabilization of the ultrashort-pulse generation. Pulses as short as 4.8 ps were generated at 1530 nm with an average output power up to 280 mW for 2 W of absorbed pump power produced by a high-brightness tapered 980 nm laser diode. Passive mode locking has also been demonstrated around 1555 nm with typical average powers of around 100 mW and pulse durations of 5.1 ps.	en
dc.language.iso	en_US	en
dc.title	Diode-pumped passively mode-locked Er,Yb:YAl3(BO3)4laser at 1.5-1.6 μm	en
dc.type	Article	ru