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Diode-pumped Er,Yb:GdAB laser passively Q-switched by MBE-grown Cr:ZnS/Cr,Co:ZnS thin films

dc.contributor.authorGorbachenya, K. N.en
dc.contributor.authorKisel, V. E.en
dc.contributor.authorYasukevich, A. S.en
dc.contributor.authorTolstik, N.en
dc.contributor.authorKarhu, E.en
dc.contributor.authorFurtula, V.en
dc.contributor.authorSorokin, E.en
dc.contributor.authorMaltsev, V. V.en
dc.contributor.authorLeonyuk, N. I.en
dc.contributor.authorGibson, U.en
dc.contributor.authorSorokina, I. T.en
dc.contributor.authorKuleshov, N. V.en
dc.coverage.spatialМинскru
dc.date.accessioned2017-03-23T15:47:21Z
dc.date.available2017-03-23T15:47:21Z
dc.date.issued2016
dc.identifier.citationDiode-pumped Er,Yb:GdAB laser passively Q-switched by MBE-grown Cr:ZnS/Cr,Co:ZnS thin films / K. N. Gorbachenya [et al.] // Приборостроение-2016 : материалы 9-й международной научно-технической конференции, Минск, 23-25 ноября 2016 г. / Белорусский национальный технический университет ; редкол.: О. К. Гусев [и др.]. – Минск, 2016. – С. 234-235.ru
dc.identifier.urihttps://rep.bntu.by/handle/data/28849
dc.language.isoenru
dc.publisherБНТУru
dc.titleDiode-pumped Er,Yb:GdAB laser passively Q-switched by MBE-grown Cr:ZnS/Cr,Co:ZnS thin filmsru
dc.typeWorking Paperru


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