Browsing Материалы конференции по статьям by Author "Si, Zhangxu"

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    • SiC PVT衬底/CVD外延生长法与缺陷 

      Si, Zhangxu (БНТУ, 2021)
      As the representative of the third generation of new wide band gap semiconductors, SiC has excellent physical, chemical and electrical properties.In the field of power semiconductor, especially in high power, high voltage and some special environments, it has a good application prospect.In this paper, some of its physical properties are introduced, and then the growth method and ...
      2022-03-03

    • 基于GaN的高耐压增强型HEMT功率器件 

      Si, Zhangxu (БНТУ, 2021)
      With the development of power electronics industry, silicon-based devices have gradually approached their physical limits. In order to meet the increasingly strict requirements of the working environment, the third generation of semiconductor GaN materials stand out, which has the excellent characteristics of large band gap width and high breakdown field strength.It is expected ...
      2022-03-03