Browsing by Author "Zharin, A. L."
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Detection of Hidden Defects Induced by Thermomechanical Processing of Aluminum Substrates for Sensor Devices Using a Scanning Kelvin Probe
Zharin, A. L.; Gasenkova, I. V.; Tyavlovsky, A. K.; Mukhurov, N. I.; Spitski, S. I. (БНТУ, 2025)The object of the study was aluminum substrates for creating sensor devices based on anodic aluminum oxide, which underwent mechanical processing in the form of grinding and straightening. The subject of the study was the detection of residual mechanical stresses and other surface defects to assess the quality of this processing using the scanning Kelvin probe technique. The ...2025-03-27 -
Kelvin probe error compensation based on harmonic analysis of measurement signal
Tyavlovsky, A. K.; Zharin, A. L.; Gusev, O. K.; Kierczynski, K. (2014)Kelvin probe error compensation based on harmonic analysis of measurement signal / A. K. Tyavlovsky [et al.] // Przeglad Elektrotechniczny. – 2014. – Vol. 90, № 3. – P. 251-254.2015-07-06 -
Kelvin probe’s stray capacitance and noise simulation
Danyluk, S.; Dubanevich, A. V.; Gusev, O. K.; Svistun, A. I.; Tyavlovsky, A. K.; Tyavlovsky, K. L.; Vorobey, R. I.; Zharin, A. L. (БНТУ, 2014)Stray capacitance effects and their influence on Kelvin probe’s performance are studied using mathematical and computer simulation. Presence of metal surface, even grounded, in vicinity of vibrating Kelvin probe produces the additional stray signal of complex harmonic character. Mean value and amplitude of this stray signal depends mostly on the ratio of stray and measurement ...2014-08-25 -
Series of Photovoltaic Converters Based on Semiconductors with Intrinsic Photoconductivity
Vorobey, R. I.; Gusev, O. K.; Zharin, A. L.; Pantsialeyeu, K. U.; Svistun, A. I.; Tyavlovsky, A. K.; Tyavlovsky, K. L.; Shadurskaya, L. I. (БНТУ, 2021)One of the ways to solve multiple problems of optical diagnostics is to use photovoltaic converters based on semiconductors with intrinsic photoconductivity slightly doped with deep impurities which form several energy levels with different charge states within the semiconductor′s bandgap. Peculiarities of physical processes of recharging these levels make it possible to construct ...2021-07-07