Browsing by Author "Poklonski, N. A."

Now showing items 1-5 of 5

    • Design of Peltier Element Based on Semiconductors with Hopping Electron Transfer via Defects 

      Poklonski, N. A.; Vyrko, S. A.; Kovalev, A. I.; Anikeev, I. I.; Gorbachuk, N. I. (БНТУ, 2021)
      The study of thermoelectric properties of crystalline semiconductors with structural defects is of practical interest in the development of radiation-resistant Peltier elements. In this case, the spectrum of energy levels of hydrogen-like impurities and intrinsic point defects in the band gap (energy gap) of crystal plays an important role. The purpose of this work is to analyze ...
      2021-03-18

    • Disordered Tin Oxide Films for Thermoelectric Applications: Correlation between Microstructure, Electrical Conductivity and Seebeck Coefficient 

      Ksenevich, V. K.; Dorosinets, V. A.; Samarina, M. A.; Poklonski, N. A.; Svito, I. A.; Adamchuk, D. V.; Abdurakhmanov, G. (БНТУ, 2025)
      The aim of the work was to establish a correlation between structural, electrical and thermoelectric properties of the disordered tin oxide films to study the possibility of their further applications as materials for thermoelectric converters. Disordered multiphase tin oxide films were synthesized by magnetron sputtering of tin onto glass substrates in argon plasma and subsequent ...
      2025-07-07

    • High-Frequency Capacitor with Working Substance "Insulator–Undoped Silicon–Insulator" 

      Poklonski, N. A.; Anikeev, I. I.; Vyrko, S. A. (БНТУ, 2022)
      The study of the parameters of capacitors with various working substances is of interest for the design and creation of electronic elements, in particular for the development of high-frequency phase-shifting circuits. The purpose of the work is to calculate the high-frequency capacitance of a capacitor with the working substance insulator undoped silicon insulator at different ...
      2022-12-29

    • Inductive Type Impedance of Mo/n-Si Barrier Structures Irradiated with Alpha Particles 

      Poklonski, N. A.; Kovalev, A. I.; Usenko, K. V.; Ermakova, E. A.; Gorbachuk, N. I.; Lastovski, S. B. (БНТУ, 2023)
      In silicon microelectronics, flat metal spirals are formed to create an integrated inductance. However, the maximum specific inductance of such spirals at low frequencies is limited to a value of the order of tens of microhenries per square centimeter. Gyrators, devices based on operational amplifiers with approximately the same specific inductance as spirals, are also used. ...
      2023-04-13

    • Low-Frequency Admittance of Capacitor with Working Substance “Insulator – Partially Disordered Semiconductor – Insulator” 

      Poklonski, N. A.; Anikeev, I. I.; Vyrko, S. A. (БНТУ, 2021)
      The study of the electrophysical characteristics of crystalline semiconductors with structural defects is of practical interest in the development of radiation-resistant varactors. The capacitance-voltage characteristics of a disordered semiconductor can be used to determine the concentration of point defects in its crystal matrix. The purpose of this work is to calculate the ...
      2021-10-15