Browsing by Author "Petlitsky, A. N."

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    • Monte Carlo Simulation of Flash Memory Elements’ Electrophysical Parameters 

      Zhevnyak, O. G.; Borzdov, V. M.; Borzdov, A. V.; Petlitsky, A. N. (БНТУ, 2022)
      Operation of modern flash memory elements is based on electron transport processes in the channel of silicon MOSFETs with floating gate. The aim of this work was calculation of electron mobility and study of the influence of phonon and ionized impurity scattering mechanisms on the mobility, as well as calculation of parasitic tunneling current and channel current in the conductive ...
      2022-12-29

    • Monte Carlo Simulation of Photoresponse in Silicon Photodiodes with p-n-Junction and p-i-n-Structure 

      Borzdov, A. V.; Borzdov, V. M.; Buinouski, D. N.; Petlitsky, A. N. (БНТУ, 2025)
      Numerical modeling of semiconductor photodiodes’ electrical characteristics is an important task at the stage of their development and design. In this regard, it should be noted that one of the most promising methods that can be used for this purpose is the ensemble Monte Carlo method, which allows including, along with the dominant mechanisms of charge carriers’ scattering in ...
      2025-07-08