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    • Monte Carlo Simulation of Photoresponse in Silicon Photodiodes with p-n-Junction and p-i-n-Structure 

      Borzdov, A. V.; Borzdov, V. M.; Buinouski, D. N.; Petlitsky, A. N. (БНТУ, 2025)
      Numerical modeling of semiconductor photodiodes’ electrical characteristics is an important task at the stage of their development and design. In this regard, it should be noted that one of the most promising methods that can be used for this purpose is the ensemble Monte Carlo method, which allows including, along with the dominant mechanisms of charge carriers’ scattering in ...
      2025-07-08