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    • Inductive Type Impedance of Mo/n-Si Barrier Structures Irradiated with Alpha Particles 

      Poklonski, N. A.; Kovalev, A. I.; Usenko, K. V.; Ermakova, E. A.; Gorbachuk, N. I.; Lastovski, S. B. (БНТУ, 2023)
      In silicon microelectronics, flat metal spirals are formed to create an integrated inductance. However, the maximum specific inductance of such spirals at low frequencies is limited to a value of the order of tens of microhenries per square centimeter. Gyrators, devices based on operational amplifiers with approximately the same specific inductance as spirals, are also used. ...
      2023-04-13