Now showing items 1-2 of 2

    • Formation of Cone-Shaped Inclusions and Line Defects on the Cz-Si Wafer Surface by the Helium Implantation and DC Nitrogen Plasma Treatment 

      Frantskevich, N. V.; Mazanik, A. V.; Frantskevich, A. V.; Koltunowicz, T.; Zukowski, P. (2011)
      The general goal of this work is to investigate the defects formed on the surface of the Cz-Si wafers subjected to helium implantation, vacuum annealing and nitrogen plasma treatment. The performed scanning electron microscopy study has shown that in the general case two types of surface defects can be formed: cone-shaped inclusions with the base diameter of 0.2-2 mu m and the ...
      2018-03-10
    • Micro-Raman Investigation of Hydrogen Localized in Cone-Shaped Defects Formed on the Silicon Wafer Surface 

      Frantskevich, N. V.; Fedotov, A. K.; Frantskevich, A. V.; Mazanik, N. V. (2014)
      The goal of this work is the micro-Raman study of molecular hydrogen localized in cone-shaped defects, which are formed on the surface of previously helium implanted and annealed Czochralski Si wafers as a result of hydrogen plasma treatment. The line at ≈ 4158 cm corresponding to molecular hydrogen is observed in the Raman spectra when the laser beam is focused both on cone-shaped ...
      2017-11-04