• CW Tm:KLu(WO4)2 microchip laser 

    Loiko, P. A.; Serres, J. M.; Mateos, X.; Yumashev, K. V.; Kuleshov, N. V.; Petrov, V.; Griebner, U.; Aguilo, M.; Diaz, F. (БНТУ, 2014)
    CW Tm:KLu(WO4)2 microchip laser / P. A. Loiko [и др.] // Приборостроение-2014 : материалы 7-й Международной научно-технической конференции (19–21 ноября 2014 года, Минск, Республика Беларусь) / ред. колл.: О. К. Гусев [и др.]. – Минск : БНТУ, 2014. – С. 231 - 232.
    2015-03-19
  • Graphene Q-Switched Compact Yb: YAG Laser 

    Serres, J. M.; Jambunathan, V.; Mateos, X.; Loiko, P.; Lucianetti, A.; Mocek, T.; Yumashev, K.; Petrov, V.; Griebner, U.; Aguilo, M.; Diaz, F. (2015)
    We describe a compact Yb: YAG laser Q-switched by a graphene-based saturable absorber and pumped by a laser diode at 932 or 969 nm. The compact laser generates a maximum average output power value of 185 mW at 1032 nm with a slope efficiency value of 12%. The shortest duration of the Q-switched pulse achieved is 228 ns at a repetition frequency of 285 kHz. The maximum pulse energy ...
    2017-11-04
  • Graphene Q-switched waveguide laser at 1.83 μm 

    Kifle, E.; Mateos, X.; Loiko, P. A.; Yumashev, K. V.; Petrov, V.; Griebner, U.; Aguilo, M.; Diaz, F. (БНТУ, 2016)
    Graphene Q-switched waveguide laser at 1.83 μm / E. Kifle [et al.] // Приборостроение-2016 : материалы 9-й международной научно-технической конференции, Минск, 23-25 ноября 2016 г. / Белорусский национальный технический университет ; редкол.: О. К. Гусев [и др.]. – Минск, 2016. – С. 236-237.
    2017-03-23
  • Microchip laser operation of Tm,Ho:KLu(WO4)2 crystal 

    Loiko, P.; Serres, J. M.; Mateos, X.; Yumashev, K.; Kuleshov, N.; Petrov, V.; Griebner, U.; Aguilo, M.; Diaz, F. (2014)
    A microchip laser is realized on the basis of a monoclinic Tm,Ho-codoped KLu(WO4)2 crystal cut for light propagation along the Ng optical indicatrix axis. This crystal cut provides positive thermal lens with extremely weak astigmatism, S/M = 4%. High sensitivity factors, M = dD/dPabs, of 24.9 and 24.1 m−1/W for the mg- and pg- tangential planes are calculated with respect to the ...
    2017-11-15
  • Passive Q-switching of a Tm,Ho:KLu(WO4)2 microchip laser by a Cr:ZnS saturable absorber 

    Serres, Y. M.; Loiko, P. A.; Mateos, X.; Jambunathan, V.; Yasukevich, A. S.; Yumashev, K. V.; Petrov, V.; Griebner, U.; Aguilo, M.; Diaz, F. (Optical Society of America, 2016)
    A diode-pumped Tm;Ho:KLu WO42 microchip laser passively Q-switched with a Cr:ZnS saturable absorber generated an average output power of 131 mW at 2063.6 nm with a slope efficiency of 11% and a Q-switching conversion efficiency of 58%. The pulse characteristics were 14 ns∕9 μJ at a pulse repetition frequency of 14.5 kHz. With higher modulation depth of the saturable absorber, 9 ...
    2016-05-12
  • Passive Q-switching of Yb bulk lasers by a graphene saturable absorber 

    Loiko, P. A.; Serres, J. M.; Mateos, X.; Liu, G.; Zhang, H.; Yasukevich, A. S.; Yumashev, K. V.; Petrov, V.; Griebner, U.; Aguilo, M.; Diaz, F. (Springer, 2016)
    Compact Yb:KLu(WO4)2 and Yb:LuVO4 lasers diode-pumped at 978 nm are passively Q-switched by a single-layer graphene saturable absorber. The Yb:KLu(WO4)2 laser generated 165 ns/0.49 μJ pulses at 1030 nm with 170 mW average output power and 12 % slope efficiency. With the Yb:LuVO4 laser, 152 ns/0.83 μJ pulses were achieved. The output power reached 300 mW at 1024 nm, and the slope ...
    2016-05-11
  • Tm:KLu(WO4)2 microchip laser Q-switched by a graphene-based saturable absorber 

    Serres, J. M.; Loiko, P.; Mateos, X.; Yumashev, K.; Griebner, K. U.; Petrov, V.; Aguilo, M.; Diaz, F. (2015)
    We report on the first Tm-doped double tungstate microchip laser Q-switched with graphene using a Tm:KLu(WO4)2 crystal cut along the Ng dielectric axis. This laser generates a maximum average output power of 310 mW with a slope efficiency of 13%. At a repetition rate of 190 kHz the shortest pulses with 285 ns duration and 1.6 μJ energy are achieved
    2017-11-18