Now showing items 1-10 of 16
Thermo-optic properties of Yb:Lu2O3 single crystals
A detailed study of thermo-optic properties of 1.5 at.% Yb:Lu2O3 single crystal is performed. Thermo-optic dispersion formulas are derived for dn/dT coefficient and thermal coefficient of the optical path. At the wavelength of 1.03 μm, dn/dT = 5.8 × 10−6 K−1. High-precision temperature-dependent measurements of the thermal expansion coefficient α are performed. At the room ...
Ho:KLuW microchip laser intracavity pumped by a diode-pumped Tm:KLuW laser
A compact intracavity-pumped microchip Ho laser is realized using stacked Tm:KLuW/Ho:KLuW crystals pumped by a laser diode at 805 nm; both crystals are cut for light propagation along the Ng optical indicatrix axis and emit with polarization along the Nm axis. Maximum CW output power of 285 mW is achieved at a wavelength of 2080 nm for 5.6 W absorbed pump power in the Tm:KLuW ...
Thermal lens study in diode pumped Ng- and Np-cut Nd:KGd(WO4)2 laser crystals
(Optical Society of America, 2009)
A comparative study of thermal lensing effect in diode laser pumped Ng- and Np-cut Nd:KGd(WO4)2 (KGW) laser crystals was performed for laser emission polarized along the principle refractive axis, Nm. The thermal lens in the Ng-cut Nd: KGW was found to be weakly astigmatic with a positive refractive power for both the Nm- and Np-directions. For Np -cut Nd:KGW, strong astigmatism ...
All-space existence and dispersion of athermal directions in monoclinic KY(WO4)2
The analytical expressions for thermo-optic coefficients, dn/dT, for “fast” and “slow” light waves propagating along the arbitrary direction in a biaxial crystal are derived. On the basis of these expressions, the all-space analysis of existence of athermal directions is performed for monoclinic and biaxial KY(WO4)2 at 1.03 μm. The calculations are performed for an arbitrary ...
Anisotropy of the photo-elastic effect in Nd : KGd(WO4) 2 laser crystals
The anisotropy of thermal lensing and the photo-elastic effect is characterized for diodepumped Nd : KGd(WO4)2 crystals cut along the Np and Ng optical indicatrix axes and along its optical axis, O = Ng + 43°, at a laser wavelength of 1067 nm. Distortions in the spatial profile of the output laser beam are analyzed. The thermal lens is astigmatic; the orientation of its principal ...
Cooperative up-conversion in Eu3+,Yb3+-doped SiO2–PbO–PbF2–CdF2 oxyfluoride glass
Novel oxy fluoride glass doped with YbF3 and Eu2O3 is synthesized in the SiO2–PbO–PbF2–CdF2 system by melt quenching technique. Its physical properties, as well as the optical absorption of Eu3+ and Yb3+ ions are studied. Spectroscopic properties of Eu3+ ions are modeled within modified Judd–Ofelt theory, yielding absorption oscillator strength, luminescence branching ratios and ...
Up- and down-conversion emissions from Er3+ doped K2YF5 and K2YbF5 crystals
Up- and down-conversion emissions from Er3+ doped K2YF5 and K2YbF5 crystals / P. A. Loiko [et al.] // Journal of Luminescence. – 2016. – Vol. 170. – P. 1-7.
Spectroscopic and photoluminescence characterization of Eu 3+-doped monoclinic KY(WO4)2 crystal
Monoclinic 2 at% Eu-doped KY(WO4)2 is grown by top-seeded solution growth method. Polarizationresolved absorption and stimulated-emission cross-section spectra are determined for this crystal. Spectroscopic properties of Eu:KY(WO4)2 are modeled within conventional Judd–Ofelt theory, as well as theory of f–f transition intensities for systems with anomalously strong configuration ...
Passive Q-switching of Yb bulk lasers by a graphene saturable absorber
Compact Yb:KLu(WO4)2 and Yb:LuVO4 lasers diode-pumped at 978 nm are passively Q-switched by a single-layer graphene saturable absorber. The Yb:KLu(WO4)2 laser generated 165 ns/0.49 μJ pulses at 1030 nm with 170 mW average output power and 12 % slope efficiency. With the Yb:LuVO4 laser, 152 ns/0.83 μJ pulses were achieved. The output power reached 300 mW at 1024 nm, and the slope ...
Passive Q-switching of a Tm,Ho:KLu(WO4)2 microchip laser by a Cr:ZnS saturable absorber
(Optical Society of America, 2016)
A diode-pumped Tm;Ho:KLu WO42 microchip laser passively Q-switched with a Cr:ZnS saturable absorber generated an average output power of 131 mW at 2063.6 nm with a slope efficiency of 11% and a Q-switching conversion efficiency of 58%. The pulse characteristics were 14 ns∕9 μJ at a pulse repetition frequency of 14.5 kHz. With higher modulation depth of the saturable absorber, 9 ...