Tm:KLu(WO4)2 microchip laser Q-switched by a graphene-based saturable absorber

dc.contributor.author	Serres, J. M.
dc.contributor.author	Loiko, P.
dc.contributor.author	Mateos, X.
dc.contributor.author	Yumashev, K.
dc.contributor.author	Griebner, K. U.
dc.contributor.author	Petrov, V.
dc.contributor.author	Aguilo, M.
dc.contributor.author	Diaz, F.
dc.date.accessioned	2017-11-18T08:24:26Z
dc.date.available	2017-11-18T08:24:26Z
dc.date.issued	2015
dc.identifier.citation	Tm:KLu(WO4)2 microchip laser Q-switched by a graphene-based saturable absorber / J. M. Serres [et al.] // Optics Express. – 2015. – Vol. 23, № 11. – P. 14108-14113.	en
dc.identifier.uri	https://rep.bntu.by/handle/data/34717
dc.description.abstract	We report on the first Tm-doped double tungstate microchip laser Q-switched with graphene using a Tm:KLu(WO4)2 crystal cut along the Ng dielectric axis. This laser generates a maximum average output power of 310 mW with a slope efficiency of 13%. At a repetition rate of 190 kHz the shortest pulses with 285 ns duration and 1.6 μJ energy are achieved.	en
dc.language.iso	en	en
dc.title	Tm:KLu(WO4)2 microchip laser Q-switched by a graphene-based saturable absorber	en
dc.type	Article	ru